Jamiyanaa Dashdorj, Ph.D.

Jamiyanaa Dashdorj
Assistant Professor of Physics
412-365-1345
Buhl - 234A

Hometown:  UlanBator
Joined Chatham:  2016

ACADEMIC AREAS OF INTEREST

Spectroscopy, point defects and charge transfer processes in semiconductors, and transport properties of gaseous ions.

PERSONAL AREAS OF INTEREST

Soccer, chess and travel.

BIOGRAPHY

I grew up in Mongolia and studied in Italy, before coming to the US for graduate school. Prior to joining the faculty at Chatham, I was a postdoctoral research associate at University of Alabama (Birmingham) working with Dr. Mary Ellen Zvanut. We investigated point defects and charge transfer mechanisms in compound semiconductors: GaN, SrTiO3, ZnSe and SiC by using an electron paramagnetic resonance spectroscopy. Here at Chatham, I teach calculus-based physics and conduct research with Dr. Larry Viehland (emeritus professor) and Dr. Rainer Jonhsen (University of Pittsburgh) to improve the accuracy of gaseous ion mobility measurements by using a drift tube mass spectrometer. I also collaborate with Dr. Randall Feenstra’s research group at Carnegie Mellon University to study nano-structured materials by using a low-temperature scanning tunneling microscopy.

EDUCATION

  • PhD in Applied Physics, Colorado School of Mines
  • MS in Condensed Matter Physics, International Center for Theoretical Physics (Trieste, Italy)
  • BS in Physics, University of Mongolia (UlanBator)
AWARDS 
  • Italian Government Scholarship (Trieste, Italy)
  • International Atomic Energy Agency Fellowship (Vienna, Austria)
  • TWAS/CNPQ Fellowship for Visiting Scientist at Federal University of Parana (Curitiba, Brazil)
ORGANIZATIONS
  • American Physical Society (APS)
  • Materials Research Society (MRS)
PUBLICATIONS
  • J. Dashdorj, W.C. Pfalzgraff, A.D. Trout, D. Fingerlow, M. Cordier, and L.A. Viehland, “Determination of mobility and diffusion coefficients of Ar+ and Ar2+ ions in argon gas”, Int. J. Ion Mobil. Spec., Springer Nature, DOI: 10.1007/s12127-020-00258-z (2020).
  • L.A. Viehland, A. Lutfullaeva, J. Dashdorj and R. Johnsen, “Accurate gaseous ion mobility measurements”, Int. J. Ion Mobil. Spec. DOI 10.1007/s12127-017-0220-0 (2017).
  • W.R. Willoughby, M.E. Zvanut, J. Dashdorj, and M. Bockowski, “A model for Be-related photo-absorption in compensated GaN:Be substrates”, J. Appl. Phys. 120, 115701 (2016).
  • M.E. Zvanut, J. Dashdorj, U. Sunay, J.H. Leach, and K. Udwary, “Effect of local fields on the Mg acceptor in GaN films and GaN substrates”, J. Appl. Phys. 120, 135702 (2016).
  • M.E. Zvanut, J. Dashdorj, J.A. Freitas Jr., E.R. Glaser, W.R. Willoughby, J.H. Leach, and K. Udwary, “Incorporation of Mg in free-standing HVPE GaN substrates”, J. Electron. Mater., DOI: 10.1007/s11664-0164413-9 (2016).
  • M.E. Zvanut, J. Dashdorj, J.A. Freitas Jr., E.R. Glaser, J.H. Leach, and K. Udwary, “Incorporation of Mg into thick free-standing HVPE GaN”, MRS Advances, DOI: 10.1557/adv.2016.102 (2016).
  • J. Dashdorj, W.R. Willoughby, M.E. Zvanut, and M. Bockowski, “Electron paramagnetic resonance studies of bulk Mg-doped GaN grown by high nitrogen pressure solution method”, DOI 10.1002/ pssc.201400181, Phys. Status Solidi C, 4-5, 338 (2015).
  • V.M. Poole, J. Dashdorj, M.E. Zvanut, and M.D. McCluskey, ”Large persistent photoconductivity in strontium titanate at room temperature”, Mater. Res. Soc. Symp. Proc. 1792 (2015).
  • J. Dashdorj, M.E. Zvanut, and M. Bockowski, “Determination of an acceptor level in bulk GaN grown by high nitrogen pressure solution method”, DOI 10.1002/pssb.201451567, Phys. Status Solidi B, 1-5, 1 (2015).
  • V.V. Fedorov, T. Konak, J. Dashdorj, M.E. Zvanut, and S.B. Mirov, “Optical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals”, Opt. Mater. 37, 262 (2014).
  • U.R. Sunay, J. Dashdorj, M.E. Zvanut, J.G. Harrison, J. H. Leach, and K. Udwary, “Charge Transfer in Fe-doped GaN: the Role of the Donor”, ICDS-AIP Conf. Proc. 1583, 297-300 DOI: 10.1063/1.4865656 (2014).
  • J. Dashdorj, M.E. Zvanut, J.G. Harrison, K. Udwary, and T. Paskova, “Charge transfer in semi-insulating Fe-doped GaN”, J. Appl. Phys. 112, 013712 (2012).
  • M.E. Zvanut, U.R. Sunay, J. Dashdorj, W.R. Willoughby, and A.A. Allerman, “Mg-hydrogen interaction in AlGaN alloys”, Proc. SPIE 8262, DOI: 10.1117/12.916073 (2012).
  • M.E. Zvanut, Y. Uprety, J. Dashdorj, M. Moseley, and W. Alan Doolittle, “Passivation and activation of Mg acceptors in heavily doped GaN”, J. Appl. Phys. 110, 044508 (2011).
  • J. Dashdorj, M.E. Zvanut, and L.J. Stanley, “Iron-related defect levels in SrTiO3 measured by photo-electron paramagnetic resonance spectroscopy”, J. Appl. Phys. 107, 083513 (2010).
  • M.E. Zvanut, S.A. Thomas, and J. Dashdorj, “Intrinsic surface defects on 4H-SiC substrates”, Mater. Res. Soc. Symp. Proc. 1246, B-12-03 (2010).
  • M.E. Zvanut, G. Ngetich, J. Dashdorj, N.Y. Garces, and E.R. Glaser, “Photo-induced behavior of the VCCSi- pair defect in 4H-SiC grown by physical vapor transport and halide chemical vapor deposition”, J. Appl. Phys. 106, 064908 (2009).
  • J. Dashdorj, M.E. Zvanut, and J.G. Harrison, “Measurements of optical cross sections of carbon vacancy in 4H-SiC by time-dependent photoelectron paramagnetic resonance”, J. Appl. Phys. 104, 113707 (2008).
  • J. Dashdorj and M.E. Zvanut, “Study of chromium impurities in SrTiO3 by photo-electron paramagnetic resonance spectroscopy”, Mater. Res. Soc. Symp. Proc. 1034, K-10-19 (2007).
  • K. Metzger, R.K. Ahrenkiel, J. Dashdorj, and D.J. Friedman, “Analysis of charge separation dynamics in a semiconductor junction”, Phys. Rev. B 71, 035301 (2005).
  • K. Ahrenkiel and J. Dashdorj, “Interface recombination velocity measurement by a contactless microwave technique”, J. Vac. Sci. Technol. B 22(4), 2063 (2004).
 PRESENTATIONS
  • J. Dashdorj, M.E. Zvanut, and M.M. Bockowski, “EPR detected defect center in bulk GaN substrates grown by high pressure nitrogen solution method”, APS March Meeting, San Antonia, TX, 2015.
  • J. Dashdorj, M.E. Zvanut, J.G. Harrison, T. Paskova, and K. Udwary, “Thermal capture rate of electrons by Fe acceptor in GaN”, APS March Meeting, Dallas, TX, 2011.
  • J. Dashdorj, M.E. Zvanut, and J.G. Harrison, “Charge transfer kinetics of the carbon vacancy defect in 4H-SiC”, APS March Meeting, Pittsburgh, PA, 2009.
  • J. Dashdorj, M.E. Zvanut, and J. Harrison, “A defect relaxation model for the carbon vacancy in SiC”, APS March Meeting, New Orleans, LA, 2008.
  • J. Dashdorj and M.E. Zvanut, “Study of chromium impurities in SrTiO3 by photo-Electron Paramagnetic Resonance Spectroscopy”, MRS Fall Meeting, Boston, MA, 2007.
  • J. Dashdorj, R.K. Ahrenkiel, and W.K. Metzger, “Modeling of recombination lifetimes in charge-separation device structures”, MRS Fall Meeting, Boston, MA, 2003.