Jamiyanaa Dashdorj, Ph.D.

Photo of Jamiyanaa Dashdorj
Assistant Professor of Physics
Buhl - 234A

Hometown:  UlanBator
Joined Chatham:  August 2016


Dr. Dashdorj teaches calculus-based physics and laboratory courses; and conducts research with his colleagues to improve accuracy of gaseous ion mobility measurement using a drift tube mass spectrometer. 


Soccer, chess and travel.


Jami Dashdorj studied and trained in Mongolia, Austria, Italy, and Brazil, before coming to U.S. for graduate school. He earned his Ph.D. in applied physics from Colorado School of Mines building a non-destructive minority carrier recombination lifetime mapping system at National Renewable Energy Laboratory. Prior to joining the faculty at Chatham, Dr. Dashdorj was a research associate at University of Alabama (Birmingham) investigating point defects and charge transfer mechanisms in GaN, SrTiO3, ZnSe and SiC using electron paramagnetic resonance spectroscopy. 


  • PhD in Applied Physics, Colorado School of Mines
  • MS in Condensed Matter Physics, International Center for Theoretical Physics (Trieste, Italy)
  • BS in Physics, University of Mongolia (UlanBator)
  • Italian Government Scholarship (Trieste, Italy)
  • International Atomic Energy Agency Fellowship (Vienna, Austria)
  • TWAS/CNPQ Fellowship for Visiting Scientist at Federal University of Parana (Curitiba, Brazil)
  • American Physical Society (APS)
  • Materials Research Society (MRS)
  • Dashdorj, L.A. Viehland, A. Lutfullaeva, and R. Johnsen, “Accurate gaseous ion mobility measurements”, 70th Annual Gaseous Electronics Conference, Pittsburgh, PA, 2017.
  • Dashdorj, M.E. Zvanut, and M.M. Bockowski, “EPR detected defect center in bulk GaN substrates grown by high pressure nitrogen solution method”, APS March Meeting, San Antonia, TX, 2015.
  • Dashdorj, M.E. Zvanut, J.G. Harrison, T. Paskova, and K. Udwary, “Thermal capture rate of electrons by Fe acceptor in GaN”, APS March Meeting, Dallas, TX, 2011.
  • Dashdorj, M.E. Zvanut, and J.G. Harrison, “Charge transfer kinetics of the carbon vacancy defect in 4H-SiC”, APS March Meeting, Pittsburgh, PA, 2009.
  • Dashdorj, M.E. Zvanut, and J. Harrison, “A defect relaxation model for the carbon vacancy in SiC”, APS March Meeting, New Orleans, LA, 2008.
  • Dashdorj and M.E. Zvanut, “Study of chromium impurities in SrTiO3 by photo-Electron Paramagnetic Resonance Spectroscopy”, MRS Fall Meeting, Boston, MA, 2007.
  • Dashdorj, R.K. Ahrenkiel, and W.K. Metzger, “Modeling of recombination lifetimes in charge-separation device structures”, MRS Fall Meeting, Boston, MA, 2003.